? 2006 ixys corporation all rights reserved ds99690 (11/06) symbol test conditions maximum ratings v dss t j = 25c to 175c 75 v v dgr t j = 25c to 175c; r gs = 1 m 75 v v gsm transient 20 v i d25 t c = 25c 160 a i lrms lead current limit, rms 75 a i dm t c = 25c, pulse width limited by t jm 430 a i ar t c = 25c 25 a e as t c = 25c 750 mj dv/dt i s i dm , di/dt 100 a/ms, v dd v dss 3 v/ns t j 175c, r g = 5 p d t c = 25c 360 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-3p, to-220) 1.13 / 10 nm/lb.in. weight to-3p 5.5 g to-247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a75v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 4.8 6.0 m trenchmv tm power mosfet n-channel enhancement mode avalanche rated ixth160n075t IXTQ160N075T v dss =75 v i d25 = 160 a r ds(on) 6.0 m to-3p (ixtq) preliminary technical information g d s to-247 (ixth) g s d d (tab) d (tab) g = gate d = drain s = source tab = drain features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - 42v power bus - abs systems dc/dc converters and off-line ups primary switch for 24v and 48v systems high current switching applications
ixys reserves the right to change limits, test conditions, and dimensions. ixth160n075t IXTQ160N075T symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60 a, note 1 65 100 s c iss 4950 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 790 pf c rss 145 pf t d(on) resistibve switching times 29 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 64 ns t d(off) r g = 5 (external) 60 ns t f 60 ns q g(on) 112 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 30 nc q gd 30 nc r thjc 0.42c/w r thch 0.25 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 160 a i sm pulse width limited by t jm 430 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s80ns v r = 40 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537
? 2006 ixys corporation all rights reserved fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 0123456 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 80a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 160a i d = 80a fig. 5. r ds(on) normalized to i d = 80a value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 50 100 150 200 250 300 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-263 (7-lead) external lead current limit for to-3p, to-220, & to-263 ixth160n075t IXTQ160N075T
ixys reserves the right to change limits, test conditions, and dimensions. ixth160n075t IXTQ160N075T fig. 7. input admittance 0 30 60 90 120 150 180 210 240 270 3 3.5 4 4.5 5 5.5 6 6.5 7 v gs - volts i d - amperes t j = -40oc 25oc 150oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110120 q g - nanocoulombs v gs - volts v ds = 37v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved fig. 14. resistive turn-on rise time vs. drain current 10 20 30 40 50 60 70 80 25 30 35 40 45 50 i d - amperes t r - nanoseconds r g = 5 v gs = 10v v ds = 38v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 10 20 30 40 50 60 70 80 90 100 4 6 8 101214161820 r g - ohms t r - nanoseconds 24 26 28 30 32 34 36 38 40 42 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 38v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 42 44 46 48 50 52 54 56 58 60 62 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 55 58 61 64 67 70 73 76 79 82 85 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 38v i d = 25a i d = 50a fig. 13. resistive turn-on rise time vs. junction temperature 15 20 25 30 35 40 45 50 55 60 65 70 75 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 v gs = 10v v ds = 38v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 40 50 60 70 80 90 100 110 120 130 4 6 8 101214161820 r g - ohms t f - nanoseconds 50 70 90 110 130 150 170 190 210 230 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 38v i d = 50a i d = 25a fig. 17. resistive turn-off switching times vs. drain current 42 44 46 48 50 52 54 56 58 60 62 25 30 35 40 45 50 i d - amperes t f - nanoseconds 50 54 58 62 66 70 74 78 82 86 90 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 38v t j = 125oc t j = 25oc t j = 25oc t j = 125oc ixth160n075t IXTQ160N075T ixys ref: t_160n075t (4v) 6-16-06.xls
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